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dc.contributor.authorMuthui, Zipporah1,2,3,a),b)
dc.contributor.authorMusembi, Robinson1,a)
dc.contributor.authorMwabora, Julius1,a)
dc.contributor.authorKashyap, Arti2,a),c)
dc.date.accessioned2020-10-23T06:23:30Z
dc.date.available2020-10-23T06:23:30Z
dc.date.issued2017-12-07
dc.identifier.citationAIP Advancesen_US
dc.identifier.urihttps://aip.scitation.org/doi/full/10.1063/1.5007211?af=R&ai=1gvoi&mi=3ricys
dc.identifier.urihttp://repository.chuka.ac.ke/handle/chuka/4742
dc.description.abstractFirst principles study of the magnetic anisotropy of Mn2VIn (001) films show perpendicular magnetic anisotropy (PMA), which increases as a function of the thickness of the film. Density functional theory (DFT) as implemented in the Vienna Ab initio simulation package (VASP) is employed here to perform a comprehensive theoretical investigation of the structural, electronic and magnetic properties of the Mn2VIn(001) films of varying thickness. Our calculations were performed on fully relaxed structures, with five to seventeen mono layers (ML). The degree of spin polarization is higher in the (001) Mn2VIn thin films as compared to the bulk in contrast to what is usually the case and as in Mn2VAl, which is isoelectronic to Mn2VIn as well as inCo2VIn (001) films studied for comparison. Tetragonal distortions are found in all the systems after relaxation. The distortion in the Mn2VIn system persists even for the 17ML thin film, resulting in PMA in the Mn2VIn system. This significant finding has potential to contribute to spin transfer torque (STT) and magnetic random access memory MRAM applications, as materials with PMA derived from volume magnetocrystalline anisotropy are being proposed as ideal magnetic electrodesen_US
dc.language.isoenen_US
dc.subjectElectromagnetismen_US
dc.subjectFirst-principle calculationsen_US
dc.subjectMagnetic anisotropyen_US
dc.subjectThin filmsen_US
dc.subjectSpin-transfer-torqueen_US
dc.subjectVienna ab initio simulationen_US
dc.subjectpackageen_US
dc.subjectSpintronicsen_US
dc.subjectDensity functional theoryen_US
dc.subjectRandom access memoryen_US
dc.subjectAlloysen_US
dc.titlePerpendicular magnetic anisotropy in Mn2VIn (001) films: An ab initio studyen_US
dc.typeArticleen_US


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