Browsing Physics by Subject "doping,"
Now showing items 1-2 of 2
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Determination of Hall Effect Parameters of Gallium Arsenide and Gallium Manganese Arsenide by Van Der Pauw Geometry
(2012)Gallium Arsenide (GaAs) has been used widely in electronic industry to make diodes and transistors. As a semiconductor, it can be doped up with impurities with magnetic properties such as manganese to increase its electron ... -
Determination of optical band gap and heat dissipation of Ga1-xMnxAs with Light in UV-VIS-IR Region using OSA SPECTRO 320”,
(International Knowledge Sharing Platform, 2012)Heat generated by silicon-based transistors due to high energy photo irradiation interferes with the electronic conductivity of transistors in the ICs. There is need to search for an alternative semiconductor material ...